blob: 3a4a19e808f658510f65f6bfba7ff20bd7f2604b [file] [log] [blame]
// SPDX-License-Identifier: GPL-2.0-or-later
/*
* Copyright (C) 2017 Free Electrons
* Copyright (C) 2017 NextThing Co
*
* Author: Boris Brezillon <boris.brezillon@free-electrons.com>
*/
#include "internals.h"
static void samsung_nand_decode_id(struct nand_chip *chip)
{
struct mtd_info *mtd = nand_to_mtd(chip);
struct nand_memory_organization *memorg;
memorg = nanddev_get_memorg(&chip->base);
/* New Samsung (6 byte ID): Samsung K9GAG08U0F (p.44) */
if (chip->id.len == 6 && !nand_is_slc(chip) &&
chip->id.data[5] != 0x00) {
u8 extid = chip->id.data[3];
/* Get pagesize */
memorg->pagesize = 2048 << (extid & 0x03);
mtd->writesize = memorg->pagesize;
extid >>= 2;
/* Get oobsize */
switch (((extid >> 2) & 0x4) | (extid & 0x3)) {
case 1:
memorg->oobsize = 128;
break;
case 2:
memorg->oobsize = 218;
break;
case 3:
memorg->oobsize = 400;
break;
case 4:
memorg->oobsize = 436;
break;
case 5:
memorg->oobsize = 512;
break;
case 6:
memorg->oobsize = 640;
break;
default:
/*
* We should never reach this case, but if that
* happens, this probably means Samsung decided to use
* a different extended ID format, and we should find
* a way to support it.
*/
WARN(1, "Invalid OOB size value");
break;
}
mtd->oobsize = memorg->oobsize;
/* Get blocksize */
extid >>= 2;
memorg->pages_per_eraseblock = (128 * 1024) <<
(((extid >> 1) & 0x04) |
(extid & 0x03)) /
memorg->pagesize;
mtd->erasesize = (128 * 1024) <<
(((extid >> 1) & 0x04) | (extid & 0x03));
/* Extract ECC requirements from 5th id byte*/
extid = (chip->id.data[4] >> 4) & 0x07;
if (extid < 5) {
chip->base.eccreq.step_size = 512;
chip->base.eccreq.strength = 1 << extid;
} else {
chip->base.eccreq.step_size = 1024;
switch (extid) {
case 5:
chip->base.eccreq.strength = 24;
break;
case 6:
chip->base.eccreq.strength = 40;
break;
case 7:
chip->base.eccreq.strength = 60;
break;
default:
WARN(1, "Could not decode ECC info");
chip->base.eccreq.step_size = 0;
}
}
} else {
nand_decode_ext_id(chip);
if (nand_is_slc(chip)) {
switch (chip->id.data[1]) {
/* K9F4G08U0D-S[I|C]B0(T00) */
case 0xDC:
chip->base.eccreq.step_size = 512;
chip->base.eccreq.strength = 1;
break;
/* K9F1G08U0E 21nm chips do not support subpage write */
case 0xF1:
if (chip->id.len > 4 &&
(chip->id.data[4] & GENMASK(1, 0)) == 0x1)
chip->options |= NAND_NO_SUBPAGE_WRITE;
break;
default:
break;
}
}
}
}
static int samsung_nand_init(struct nand_chip *chip)
{
struct mtd_info *mtd = nand_to_mtd(chip);
if (mtd->writesize > 512)
chip->options |= NAND_SAMSUNG_LP_OPTIONS;
if (!nand_is_slc(chip))
chip->options |= NAND_BBM_LASTPAGE;
else
chip->options |= NAND_BBM_FIRSTPAGE | NAND_BBM_SECONDPAGE;
return 0;
}
const struct nand_manufacturer_ops samsung_nand_manuf_ops = {
.detect = samsung_nand_decode_id,
.init = samsung_nand_init,
};