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/**
* @file
*
* mtlrdimm3.c
*
* Technology initialization and control workd support for DDR3 LRDIMMS
*
* @xrefitem bom "File Content Label" "Release Content"
* @e project: AGESA
* @e sub-project: (Mem/Tech/DDR3)
* @e \$Revision: 63425 $ @e \$Date: 2011-12-22 11:24:10 -0600 (Thu, 22 Dec 2011) $
*
**/
/*****************************************************************************
*
* Copyright 2008 - 2012 ADVANCED MICRO DEVICES, INC. All Rights Reserved.
*
* AMD is granting you permission to use this software (the Materials)
* pursuant to the terms and conditions of your Software License Agreement
* with AMD. This header does *NOT* give you permission to use the Materials
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* of these Materials shall constitute your acceptance of those terms and
* conditions. If you do not agree to the terms and conditions of the Software
* License Agreement, please do not use any portion of these Materials.
*
* CONFIDENTIALITY: The Materials and all other information, identified as
* confidential and provided to you by AMD shall be kept confidential in
* accordance with the terms and conditions of the Software License Agreement.
*
* LIMITATION OF LIABILITY: THE MATERIALS AND ANY OTHER RELATED INFORMATION
* PROVIDED TO YOU BY AMD ARE PROVIDED "AS IS" WITHOUT ANY EXPRESS OR IMPLIED
* WARRANTY OF ANY KIND, INCLUDING BUT NOT LIMITED TO WARRANTIES OF
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* IN NO EVENT SHALL AMD OR ITS LICENSORS BE LIABLE FOR ANY DAMAGES WHATSOEVER
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* RELATED INFORMATION PROVIDED TO YOU BY AMD, EVEN IF AMD HAS BEEN ADVISED OF
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* AMD does not assume any responsibility for any errors which may appear in
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* You agree that you will not reverse engineer or decompile the Materials.
*
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* DFAR252.227-7013, et seq., or its successor. Use of the Materials by the
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* direct product thereof will be exported directly or indirectly, into any
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* government nor will be used for any purpose prohibited by the same.
* ***************************************************************************
*
*/
/*
*----------------------------------------------------------------------------
* MODULES USED
*
*----------------------------------------------------------------------------
*/
#include "AGESA.h"
#include "amdlib.h"
#include "Ids.h"
#include "mm.h"
#include "mn.h"
#include "mu.h"
#include "mt.h"
#include "mt3.h"
#include "mtspd3.h"
#include "mtrci3.h"
#include "mtsdi3.h"
#include "mtlrdimm3.h"
#include "merrhdl.h"
#include "GeneralServices.h"
#include "Filecode.h"
CODE_GROUP (G1_PEICC)
RDATA_GROUP (G1_PEICC)
#define FILECODE PROC_MEM_TECH_DDR3_MTLRDIMM3_FILECODE
/*----------------------------------------------------------------------------
* DEFINITIONS AND MACROS
*
*----------------------------------------------------------------------------
*/
/*----------------------------------------------------------------------------
* TYPEDEFS AND STRUCTURES
*
*----------------------------------------------------------------------------
*/
/*----------------------------------------------------------------------------
* PROTOTYPES OF LOCAL FUNCTIONS
*
*----------------------------------------------------------------------------
*/
VOID
STATIC
MemTSendMBCtlWord3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 Fn,
IN UINT8 Rcw,
IN UINT8 Value
);
VOID
STATIC
MemTSendExtMBCtlWord3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT16 Addr,
IN UINT16 Data,
IN UINT8 Len
);
UINT8
STATIC
MemTGetSpecialMBCtlWord3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 Dimm,
IN UINT8 Fn,
IN UINT8 Rc
);
BOOLEAN
STATIC
MemTLrDimmControlRegInit3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *OptParam
);
BOOLEAN
STATIC
MemTLrDimmFreqChgCtrlWrd3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *OptParam
);
BOOLEAN
STATIC
MemTWLPrepareLrdimm3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *Wl
);
BOOLEAN
STATIC
MemTSendAllMRCmdsLR3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *CsPtr
);
VOID
STATIC
MemTEMRS1Lr3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 ChipSel,
IN UINT8 PhyRank
);
VOID
STATIC
MemTEMRS2Lr3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 ChipSel
);
BOOLEAN
STATIC
MemTLrdimmRankMultiplication (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *DimmID
);
BOOLEAN
STATIC
MemTLrdimmBuf2DramTrain3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *OptParam
);
BOOLEAN
STATIC
MemTLrdimmSyncTrainedDlys (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *OptParam
);
BOOLEAN
STATIC
MemTLrdimmPresence (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *DimmID
);
UINT32
STATIC
MemTLrDimmGetBufferID (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 Dimm
);
VOID
STATIC
MemTLrdimmInitHook (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN LRDIMM_HOOK_ENTRYPOINT Entrypoint,
IN UINT8 Dimm,
IN OUT VOID *OptParam
);
/*----------------------------------------------------------------------------
* EXPORTED FUNCTIONS
*
*----------------------------------------------------------------------------
*/
/* -----------------------------------------------------------------------------*/
/**
*
* This function initializes LRDIMM functions.
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
*
*/
BOOLEAN
MemTLrdimmConstructor3 (
IN OUT MEM_TECH_BLOCK *TechPtr
)
{
TechPtr->TechnologySpecificHook[LrdimmSendAllMRCmds] = MemTSendAllMRCmdsLR3;
TechPtr->TechnologySpecificHook[LrdimmControlRegInit] = MemTLrDimmControlRegInit3;
TechPtr->TechnologySpecificHook[LrdimmFreqChgCtrlWrd] = MemTLrDimmFreqChgCtrlWrd3;
TechPtr->TechnologySpecificHook[WlTrainingPrepareLrdimm] = MemTWLPrepareLrdimm3;
TechPtr->TechnologySpecificHook[LrdimmRankMultiplication] = MemTLrdimmRankMultiplication;
TechPtr->TechnologySpecificHook[LrdimmBuf2DramTrain] = MemTLrdimmBuf2DramTrain3;
TechPtr->TechnologySpecificHook[LrdimmSyncTrainedDlys] = MemTLrdimmSyncTrainedDlys;
TechPtr->TechnologySpecificHook[LrdimmPresence] = MemTLrdimmPresence;
return TRUE;
}
/*----------------------------------------------------------------------------
* LOCAL FUNCTIONS
*
*----------------------------------------------------------------------------
*/
/* -----------------------------------------------------------------------------*/
/**
*
* This function sends a Control word command to an LRDIMM Memory Buffer
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in] Fn - control word function
* @param[in] Rcw - control word number
* @param[in] Value - value to send
*
*/
VOID
STATIC
MemTSendMBCtlWord3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 Fn,
IN UINT8 Rcw,
IN UINT8 Value
)
{
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
ASSERT (Rcw != RCW_FN_SELECT); // RC7 can only be used for function select
IDS_HDT_CONSOLE (MEM_FLOW, "\t\tF%dRC%d = %x\n", Fn, Rcw, Value);
//
// Select the MB Function by sending the Fn number
// to the Function Select Control Word
//
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, RCW_FN_SELECT, Fn);
//
// Send the value to the control word
//
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, Rcw, Value);
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function sends a an Extended Control word command to an LRDIMM Memory Buffer
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in] Addr - Extended Control Word Address
* Addr[15:12] Extended Control Workd Function Select
* Addr[11:0] Extended Control Word CSR Address
* @param[in] Data - value to send
* @param[in] Len - Length of data. 1 or 2 bytes
*
*/
VOID
STATIC
MemTSendExtMBCtlWord3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT16 Addr,
IN UINT16 Data,
IN UINT8 Len
)
{
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
ASSERT ((Len == 1) || (Len == 2));
if (Len == 2 ) {
IDS_HDT_CONSOLE (MEM_FLOW, "\t\tExtRC_x%04x = %04x\n", Addr, Data);
} else {
IDS_HDT_CONSOLE (MEM_FLOW, "\t\tExtRC_x%04x = %02x\n", Addr, (UINT8) (Data & 0xFF) );
}
//
// Select the MB Function by sending the Fn number
// to the Function Select Control Word
//
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, RCW_FN_SELECT, 13);
//
// Send address via control words
//
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 9, (UINT8) (Addr >> 12));
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 10, (UINT8) (Addr & 0xF));
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 11, (UINT8) ((Addr >> 4) & 0x0F));
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 12, (UINT8) ((Addr >> 8) & 0x0F));
//
// Send the Lower Byte of Data
//
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 14, (UINT8) (Data & 0xF));
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 15, (UINT8) ((Data >> 4) & 0x0F));
//
// Send the Upper Byte of Data
//
if (Len == 2) {
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 10, (UINT8) ((Addr & 0xF) + 1));
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 14, (UINT8) ((Data >> 8) & 0xF));
MemUWait10ns (800, NBPtr->MemPtr);
MemTSendCtlWord3 (TechPtr, 15, (UINT8) ((Data >> 12) & 0xF));
}
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function gets the value of special RCW
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in] Dimm - Physical LR DIMM number
* @param[in] Fn - control word function
* @param[in] Rc - control word number
*
* @return Special RCW value
*
*/
UINT8
STATIC
MemTGetSpecialMBCtlWord3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 Dimm,
IN UINT8 Fn,
IN UINT8 Rc
)
{
CONST UINT8 F0RC13PhyRankTab[] = {3, 2, 0, 1, 0};
UINT8 PhyRanks;
UINT8 LogRanks;
UINT8 DramCap;
UINT8 Value8;
UINT8 *SpdBufferPtr;
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
MemTGetDimmSpdBuffer3 (TechPtr, &SpdBufferPtr, Dimm);
Value8 = 0;
switch (Fn) {
case 0:
switch (Rc) {
case 8:
// F0RC8
Value8 = NBPtr->PsPtr->F0RC8;
break;
case 10:
// F0RC10
// 2:0 OperatingSpeed: operating speed. BIOS: Table 88.
if (NBPtr->DCTPtr->Timings.Speed == DDR667_FREQUENCY) {
Value8 = 0;
} else {
Value8 = (UINT8) (NBPtr->DCTPtr->Timings.Speed / 133) - 3;
}
break;
case 11:
// F0RC11
// 3:2 ParityCalculation: partiy calculation. BIOS: Table.
// 1:0 OperatingVoltage: operating voltage. BIOS: IF(VDDIO == 1.5) THEN 00b ELSEIF (VDDIO ==
// 1.35) THEN 01b ELSE 10b ENDIF.
DramCap = SpdBufferPtr[SPD_DENSITY] & 0xF;
if (NBPtr->PsPtr->LrdimmRowAddrBits[Dimm] > 16) {
Value8 = 8;
} else {
Value8 = 4;
}
Value8 |= CONVERT_VDDIO_TO_ENCODED (NBPtr->RefPtr->DDR3Voltage);
break;
case 13:
// F0RC13
// 3:2 NumLogicalRanks: partiy calculation. BIOS: Table 90.
// 1:0 NumPhysicalRanks: operating voltage. BIOS: Table 89.
LogRanks = NBPtr->ChannelPtr->LrDimmLogicalRanks[Dimm] >> 1;
PhyRanks = F0RC13PhyRankTab[(SpdBufferPtr[SPD_RANKS] >> 3) & 7];
Value8 = (LogRanks << 2) | PhyRanks;
break;
case 14:
// F0RC14
// 3 DramBusWidth: DRAM bus width. BIOS: IF (DeviceWidth==0) THEN 0 ELSE 1 ENDIF.
// 2 MRSCommandControl: MRS command control. BIOS: IF (F0RC15[RankMultiplicationControl]
// > 0) THEN 1 ELSE 0 ENDIF.
// 1 RefreshPrechargeCommandControl: refresh and precharge command control. BIOS: IF
// (F0RC15[RankMultiplicationControl] > 0) THEN D18F2xA8_dct[1:0][LrDimmEnhRefEn] ELSE 0 ENDIF.
// 0 AddressMirror: address mirror. BIOS: RankMap. See D18F2x[5C:40]_dct[1:0][OnDimmMirror].
if ((SpdBufferPtr[SPD_DEV_WIDTH] & 7) != 0) {
Value8 |= 8;
}
if (NBPtr->ChannelPtr->LrDimmRankMult[Dimm] > 1) {
Value8 |= 4;
if (NBPtr->GetBitField (NBPtr, BFLrDimmEnhRefEn) == 1) {
Value8 |= 2;
}
}
if ((SpdBufferPtr[SPD_ADDRMAP] & 1) != 0) {
Value8 |= 1;
}
break;
case 15:
// F0RC15
// 3:0 RankMultiplicationControl: rank multiplication control. BIOS: Table 91.
DramCap = SpdBufferPtr[SPD_DENSITY] & 0xF;
ASSERT ((DramCap >= 2) && (DramCap <= 4)); // BKDG only lists 1Gb, 2Gb, and 4Gb
switch (NBPtr->ChannelPtr->LrDimmRankMult[Dimm]) {
case 1:
Value8 = 0;
break;
case 2:
Value8 = DramCap - 1;
break;
case 4:
Value8 = DramCap + 3;
break;
default:
ASSERT (FALSE);
}
break;
default:
ASSERT (FALSE);
}
break;
case 1:
switch (Rc) {
case 0:
// F1RC0
Value8 = NBPtr->PsPtr->F1RC0;
Value8 |= (UINT8) NBPtr->GetBitField (NBPtr, BFCSTimingMux67) << 3;
break;
case 1:
// F1RC1
Value8 = NBPtr->PsPtr->F1RC1;
break;
case 2:
// F1RC2
Value8 = NBPtr->PsPtr->F1RC2;
break;
case 9:
// F1RC9
if (NBPtr->GetBitField (NBPtr, BFLrDimmEnhRefEn) == 0) {
Value8 = 1;
}
break;
default:
ASSERT (FALSE);
}
break;
case 3:
switch (Rc) {
case 0:
// F3RC0
// 3 TDQSControl: TDQS control. BIOS: 0.
// 2:0 RttNom: RttNom. BIOS: Table 57, Table 60
Value8 = NBPtr->PsPtr->RttNom[Dimm << 1];
break;
case 1:
// F3RC1
// 3 Vref: Vref. BIOS: 0.
// 2:0 RttWr: RttWr. BIOS: Table 57, Table 60.
Value8 = NBPtr->PsPtr->RttWr[Dimm << 1];
break;
case 6:
// F3RC6
// IF (D18F2x90_dct[1:0][X4Dimm] == 0) THEN 1 ELSE 0
if (NBPtr->GetBitField (NBPtr, BFX4Dimm) == 0) {
Value8 = 8;
}
break;
default:
ASSERT (FALSE);
}
break;
default:
ASSERT (FALSE);
}
return Value8;
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function sends LRDIMM Control Words to all LRDIMMS
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in,out] OptParam - Optional parameter
*
* @return TRUE
*/
BOOLEAN
STATIC
MemTLrDimmControlRegInit3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *OptParam
)
{
CONST UINT8 RCWInitTable[] = {
// RCW, Mask, SPD
F0, RC0, 0x00, SPD_NONE,
F0, RC1, 0x00, SPD_NONE,
F0, RC2, 0x03, SPD_67,
F0, RC10, 0x00, SPECIAL_CASE,
F0, RC11, 0x00, SPECIAL_CASE,
F1, RC8, 0x0F, SPD_69,
F1, RC11, 0xF0, SPD_69,
F1, RC12, 0x0F, SPD_70,
F1, RC13, 0xF0, SPD_70,
F1, RC14, 0x0F, SPD_71,
F1, RC15, 0xF0, SPD_71,
WAIT_6US, 0, 0, 0,
F0, RC3, 0xF0, SPD_67,
F0, RC4, 0x0F, SPD_68,
F0, RC5, 0xF0, SPD_68,
F0, RC6, 0x00, SPD_NONE,
F0, RC8, 0x00, SPECIAL_CASE,
F0, RC9, 0x0C, SPD_NONE,
F0, RC13, 0x00, SPECIAL_CASE,
F0, RC14, 0x00, SPECIAL_CASE,
F0, RC15, 0x00, SPECIAL_CASE,
F1, RC0, 0x00, SPECIAL_CASE,
F1, RC1, 0x00, SPECIAL_CASE,
F1, RC2, 0x00, SPECIAL_CASE,
F1, RC3, 0x00, SPD_NONE,
F1, RC9, 0x00, SPECIAL_CASE,
F1, RC10, 0x00, SPD_NONE,
F2, RC0, 0x00, SPD_NONE,
F2, RC1, 0x00, SPD_NONE,
F2, RC2, 0x0F, SPD_NONE,
F2, RC3, 0x00, SPD_NONE,
F3, RC0, 0x00, SPECIAL_CASE,
F3, RC1, 0x00, SPECIAL_CASE,
F3, RC2, 0x01, SPD_NONE,
F3, RC6, 0x00, SPECIAL_CASE
//
// F3 RC[8,9] are programmed in MDQ RC loop
//
// F[10:3] RC[11,10] are programmed in QxODT RC loop
//
// F[15,14] RC[15:0] are programmed in personality RC loop
};
UINT8 Dimm;
UINT16 i;
UINT16 DimmMask;
UINT8 Fn;
UINT8 Rc;
UINT8 Mask;
UINT8 Spd;
UINT8 *SpdBufferPtr;
UINT8 FreqDiffOffset;
UINT8 Value8;
UINT32 Temp32;
MEM_DATA_STRUCT *MemPtr;
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
MemPtr = NBPtr->MemPtr;
if (NBPtr->MCTPtr->Status[SbLrdimms]) {
for (Dimm = 0; Dimm < MAX_DIMMS_PER_CHANNEL; Dimm++) {
DimmMask = (UINT16)1 << Dimm;
if ((NBPtr->ChannelPtr->LrDimmPresent & DimmMask) != 0) {
//
// Select the Target Chipselects
//
NBPtr->SetBitField (NBPtr, BFMrsChipSel, (Dimm << 1));
NBPtr->SetBitField (NBPtr, BFCtrlWordCS, 3 << (Dimm << 1));
MemTGetDimmSpdBuffer3 (TechPtr, &SpdBufferPtr, Dimm);
IDS_HDT_CONSOLE (MEM_FLOW, "\t\tSending LRDIMM Control Words: Dimm %02x\n", Dimm);
for (i = 0; i < sizeof (RCWInitTable) ; i += 4) {
Fn = RCWInitTable[i];
Rc = RCWInitTable[i + 1];
Mask = RCWInitTable[i + 2];
Spd = RCWInitTable[i + 3];
if (Fn == WAIT_6US) {
MemUWait10ns (600, MemPtr); // wait 6us for TSTAB
} else {
if (Spd == SPD_NONE) {
Value8 = Mask;
} else if (Spd == SPECIAL_CASE) {
Value8 = MemTGetSpecialMBCtlWord3 (TechPtr, Dimm, Fn, Rc);
} else {
Value8 = (Mask > 0x0F) ? ((SpdBufferPtr[Spd] & Mask) >> 4) : (SpdBufferPtr[Spd] & Mask);
}
MemTSendMBCtlWord3 (TechPtr, Fn, Rc, Value8);
}
}
FreqDiffOffset = (UINT8) (SPD_FREQ_DIFF_OFFSET * (((NBPtr->DCTPtr->Timings.Speed / 133) - 3) / 2));
//
// Send RCW to program MDQ termination and drive strength
//
for (Rc = 8; Rc <= 9; Rc++) {
Value8 = SpdBufferPtr[SPD_MDQ_800_1066 + FreqDiffOffset];
Value8 = (Rc == 9) ? (Value8 >> 4) : Value8;
MemTSendMBCtlWord3 (TechPtr, 3, Rc, Value8 & 0x07);
}
//
// Send RCW to program QxODT
//
for (Fn = 3; Fn <= 10; Fn ++) {
for (Rc = 10; Rc <= 11; Rc++) {
Value8 = SpdBufferPtr[SPD_QXODT_800_1066 + FreqDiffOffset + ((Fn - 3) >> 1)];
Value8 = (Rc == 11) ? (Value8 >> 4) : (Value8 & 0x0F);
Value8 = ((Fn & 1) == 0) ? (Value8 >> 2) : (Value8 & 0x03);
MemTSendMBCtlWord3 (TechPtr, Fn, Rc, Value8);
}
}
MemTLrdimmInitHook (TechPtr, AFTER_TSTAB, Dimm, 0);
//
// Send Personality bytes from SPD
//
for (i = 0; i < 15; i ++) {
Value8 = SpdBufferPtr[SPD_PERSONALITY_BYTE + i];
Fn = (UINT8) (14 + (i >> 3));
Rc = (UINT8) ((i << 1) & 0x0F);
if ( i == 0) {
Value8 |= 0x01;
} else if ( i > 10) {
Rc += 2;
}
MemTSendMBCtlWord3 (TechPtr, Fn, Rc, (Value8 & 0x0F));
if (i == 3) {
Fn++;
} else {
Rc++;
}
MemTSendMBCtlWord3 (TechPtr, Fn, Rc, (Value8 >> 4));
}
//
// Send Extended Control Words to Buffer
//
// ExtRC_xAC
//
MemTSendExtMBCtlWord3 (TechPtr, 0x00AC, 0, 1);
//
// ExtRC_xB8-BF
//
Value8 = SpdBufferPtr[SPD_MR1_MR2_800_1066 + FreqDiffOffset];
for (i = 0x00B8; i < 0x00C0; i++) {
MemTSendExtMBCtlWord3 (TechPtr, i, Value8, 1);
if (i == 0xB9) {
//
// Phys ranks > 1, Rtt_nom = 0
//
Value8 &= 0xE3;
}
}
// ExtRC_xC8
Value8 = (UINT8) (NBPtr->MemNGetMR0CL (NBPtr) & 0x000000FF);
Value8 = ((Value8 & 0xE0) | ((Value8 & 0x04) << 1));
Value8 |= 1 << 2; // RBT
Value8 |= NBPtr->GetBitField (NBPtr, BFBurstCtrl); // BL
MemTSendExtMBCtlWord3 (TechPtr, 0x00C8 , Value8, 1);
// ExtRC_xC9
// PPD
Value8 = (UINT8) (NBPtr->GetBitField (NBPtr, BFPchgPDModeSel) & 0x000000FF);
NBPtr->FamilySpecificHook[MR0_PPD] (NBPtr, &Value8);
IDS_OPTION_HOOK (IDS_MEM_MR0, &Value8, &TechPtr->NBPtr->MemPtr->StdHeader);
Value8 <<= 4;
// WR
Temp32 = NBPtr->MemNGetMR0WR (NBPtr);
Value8 |= (UINT8) ((Temp32 >> 8) & 0x000000FF);
MemTSendExtMBCtlWord3 (TechPtr, 0x00C9 , Value8, 1);
// ExtRC_xCA
MemTSendExtMBCtlWord3 (TechPtr, 0x00CA , 0, 1);
// ExtRC_xCB
MemTSendExtMBCtlWord3 (TechPtr, 0x00CB , 0, 1);
// ExtRC_xCC
// CWL
Value8 = (UINT8) (NBPtr->MemNGetMR2CWL (NBPtr) & 0x000000FF);
// SRT|ASR
Value8 |= 0x40;
MemTSendExtMBCtlWord3 (TechPtr, 0x00CC , Value8, 1);
// ExtRC_xCD
MemTSendExtMBCtlWord3 (TechPtr, 0x00CD , 0, 1);
// ExtRC_xCE
MemTSendExtMBCtlWord3 (TechPtr, 0x00CE , 0, 1);
// ExtRC_xCF
MemTSendExtMBCtlWord3 (TechPtr, 0x00CF , 0, 1);
}
}
}
return TRUE;
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function sends LRDIMM Control Words to all LRDIMMS
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in,out] OptParam - Optional parameter
*
* @return FALSE - The current channel does not have LRDIMM populated
* TRUE - The current channel has LRDIMM populated
*/
BOOLEAN
STATIC
MemTLrDimmFreqChgCtrlWrd3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *OptParam
)
{
UINT8 Dct;
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
if (NBPtr->MCTPtr->Status[SbLrdimms]) {
for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
MemNSwitchDCTNb (NBPtr, Dct);
if (NBPtr->DCTPtr->Timings.DctMemSize != 0) {
MemTLrDimmControlRegInit3 (TechPtr, NULL);
}
}
return TRUE;
}
return FALSE;
}
/*-----------------------------------------------------------------------------
*
*
* This function prepares LRDIMMs for WL training.
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in,out] *Wl - Indicates if WL mode should be enabled
*
* @return TRUE - LRDIMMs present
* ----------------------------------------------------------------------------
*/
BOOLEAN
STATIC
MemTWLPrepareLrdimm3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *Wl
)
{
UINT8 Dimm;
UINT8 Value8;
UINT16 MrsAddress;
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
MrsAddress = 0;
if (NBPtr->MCTPtr->Status[SbLrdimms]) {
for (Dimm = 0; Dimm < MAX_DIMMS_PER_CHANNEL; Dimm++) {
if (*(BOOLEAN *) Wl == TRUE) {
// Program WrLvOdt
NBPtr->SetBitField (NBPtr, BFWrLvOdt, NBPtr->ChannelPtr->PhyWLODT[Dimm]);
}
if ((NBPtr->ChannelPtr->LrDimmPresent & ((UINT8) 1 << Dimm)) != 0) {
if (Dimm == TechPtr->TargetDIMM) {
if (*(BOOLEAN *) Wl == TRUE) {
//
// Select the Target Chipselects
//
NBPtr->SetBitField (NBPtr, BFMrsChipSel, (Dimm << 1));
NBPtr->SetBitField (NBPtr, BFCtrlWordCS, 3 << (Dimm << 1));
// Program F0RC12 to 1h
MemTSendMBCtlWord3 (TechPtr, F0, RC12, 0x01);
if (NBPtr->ChannelPtr->Dimms >= 2) {
// For two or more LRDIMMs per channel program the buffer RttNom to the
// corresponding specifed RttWr termination
Value8 = NBPtr->MemNGetDynDramTerm (NBPtr, Dimm << 2);
} else {
// Program RttNom as normal
Value8 = NBPtr->MemNGetDramTerm (NBPtr, Dimm << 2);
}
if ((Value8 & ((UINT8) 1 << 2)) != 0) {
MrsAddress |= ((UINT16) 1 << 9);
}
if ((Value8 & ((UINT8) 1 << 1)) != 0) {
MrsAddress |= ((UINT16) 1 << 6);
}
if ((Value8 & ((UINT8) 1 << 0)) != 0) {
MrsAddress |= ((UINT16) 1 << 2);
}
NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
} else {
// Program F0RC12 to 0h
MemTSendMBCtlWord3 (TechPtr, F0, RC12, 0x00);
}
}
}
}
return TRUE;
} else {
return FALSE;
}
}
/* -----------------------------------------------------------------------------*/
/**
*
* This send all MR commands to all physical ranks of an LRDIMM
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in] *CsPtr - Target Chip Select
*
* @return FALSE - The current channel does not have LRDIMM populated
* TRUE - The current channel has LRDIMM populated
*/
BOOLEAN
STATIC
MemTSendAllMRCmdsLR3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *CsPtr
)
{
UINT8 *SpdBufferPtr;
UINT8 Rank;
UINT8 PhyRank;
UINT8 ChipSel;
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
ChipSel = *((UINT8 *) CsPtr);
if (NBPtr->MCTPtr->Status[SbLrdimms]) {
//
// For LRDIMMs, MR0, MR2, and MR3 can be broadcast to any physicall ranks behind
// each logical rank(CS) by setting MRSAddress[13]. MR1[Rtt_Nom] needs to be programmed
// differently per physical rank, so it must target a physical rank using MrsAddress[17:14].
// The actual bits used to index the physical rank are determined by the DRAM Capacity.
//
// This function will be called once for each CS where CSPresent is set, so each time
// it only needs to handle the Physical ranks behind each CS. If a Dimm is not using some
// CS due to Rank Mux, those CSPresent bits will have been already cleared.
//
//
// Select target chip select
//
NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel);
//
// 13.Send EMRS(2)
//
MemTEMRS2Lr3 (TechPtr, ChipSel);
NBPtr->SetBitField (NBPtr, BFMrsAddressHi, 1); // Set Address bit 13 to broadcast
NBPtr->SendMrsCmd (NBPtr);
//
// 14.Send EMRS(3). Ordinarily at this time, MrsAddress[2:0]=000b
//
MemTEMRS33 (TechPtr);
NBPtr->SetBitField (NBPtr, BFMrsAddressHi, 1); // Set Address bit 13 to broadcast
NBPtr->SendMrsCmd (NBPtr);
//
// 15.Send EMRS(1). Send to each physical rank.
//
MemTGetDimmSpdBuffer3 (TechPtr, &SpdBufferPtr, ChipSel >> 1);
//
// Determine first physical rank relative to the LRDIMM for this CS
//
PhyRank = ((((ChipSel & NBPtr->ChannelPtr->LrDimmLogicalRanks[ChipSel >> 1]) >> 1) & 2) | (ChipSel & 1));
for (Rank = 0; Rank < NBPtr->ChannelPtr->LrDimmRankMult[ChipSel >> 1]; Rank++) {
MemTEMRS1Lr3 (TechPtr, ChipSel, PhyRank);
//
// Set Address bit 14, 15, 16, or 17 to select physical rank, relative to the CS, according to the device size
//
NBPtr->SetBitField (NBPtr, BFMrsAddressHi, Rank << ((SpdBufferPtr[SPD_DENSITY] & 0xF) - 1 ) );
NBPtr->SendMrsCmd (NBPtr);
//
// Index to the next physical rank
//
PhyRank = PhyRank + NBPtr->ChannelPtr->LrDimmLogicalRanks[ChipSel >> 1];
}
//
// 16.Send MRS with MrsAddress[8]=1(reset the DLL)
//
MemTMRS3 (TechPtr);
NBPtr->SetBitField (NBPtr, BFMrsAddressHi, 1); // Set Address bit 13 to broadcast
NBPtr->SendMrsCmd (NBPtr);
//
// If LRDIMM, return TRUE to skip sending regular MR commands.
//
return TRUE;
}
//
// If not LRDIMM, send regular MR commands.
//
return FALSE;
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function calculates the EMRS1 value for an LRDIMM
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in] ChipSel - Chip select number
* @param[in] PhyRank - Physical rank number
*/
VOID
STATIC
MemTEMRS1Lr3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 ChipSel,
IN UINT8 PhyRank
)
{
UINT16 MrsAddress;
UINT8 Value8;
UINT8 *SpdBufferPtr;
UINT8 FreqDiffOffset;
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
MemTGetDimmSpdBuffer3 (TechPtr, &SpdBufferPtr, ChipSel >> 1);
FreqDiffOffset = (UINT8) (SPD_FREQ_DIFF_OFFSET * (((NBPtr->DCTPtr->Timings.Speed / 133) - 3) / 2));
// BA2=0,BA1=0,BA0=1
NBPtr->SetBitField (NBPtr, BFMrsBank, 1);
MrsAddress = 0;
// program MrsAddress[5,1]=output driver impedance control (DIC): 01b
MrsAddress |= ((UINT16) 1 << 1);
// program MrsAddress[5,1]=output driver impedance control (DIC):
// DIC is read from SPD byte 77, 83, or 89 depending on DDR speed
Value8 = SpdBufferPtr[SPD_MR1_MR2_800_1066 + FreqDiffOffset] & 3;
if ((Value8 & ((UINT8) 1 << 1)) != 0) {
MrsAddress |= ((UINT16) 1 << 5);
}
if ((Value8 & ((UINT8) 1 << 0)) != 0) {
MrsAddress |= ((UINT16) 1 << 1);
}
// program MrsAddress[9,6,2]=nominal termination resistance of ODT (RTT):
// RttNom is read from SPD byte 77, 83, or 89 depending on DDR speed
if (PhyRank <= 1) {
Value8 = (SpdBufferPtr[SPD_MR1_MR2_800_1066 + FreqDiffOffset] >> 2) & 7;
if ((Value8 & ((UINT8) 1 << 2)) != 0) {
MrsAddress |= ((UINT16) 1 << 9);
}
if ((Value8 & ((UINT8) 1 << 1)) != 0) {
MrsAddress |= ((UINT16) 1 << 6);
}
if ((Value8 & ((UINT8) 1 << 0)) != 0) {
MrsAddress |= ((UINT16) 1 << 2);
}
}
NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function calculates the EMRS2 value for an LRDIMM
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in] ChipSel - Chip select number
*/
VOID
STATIC
MemTEMRS2Lr3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 ChipSel
)
{
UINT8 RttWr;
UINT8 *SpdBufferPtr;
UINT8 FreqDiffOffset;
MEM_NB_BLOCK *NBPtr;
NBPtr = TechPtr->NBPtr;
// Save default RttWr
RttWr = NBPtr->PsPtr->RttWr[ChipSel];
// Override RttWr with the value read from SPD byte 77, 83, or 89 depending on DDR speed
MemTGetDimmSpdBuffer3 (TechPtr, &SpdBufferPtr, ChipSel >> 1);
FreqDiffOffset = (UINT8) (SPD_FREQ_DIFF_OFFSET * (((NBPtr->DCTPtr->Timings.Speed / 133) - 3) / 2));
NBPtr->PsPtr->RttWr[ChipSel] = SpdBufferPtr[SPD_MR1_MR2_800_1066 + FreqDiffOffset] >> 6;
// Call EMRS2 calculation
MemTEMRS23 (TechPtr);
// Restore RttWr
NBPtr->PsPtr->RttWr[ChipSel] = RttWr;
}
/*-----------------------------------------------------------------------------
*
*
* This function to determine the Rank Multiplication to use for an LRDIMM
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in,out] *DimmID - Dimm ID
*
* @return TRUE - LRDIMM Support is installed and LRDIMMs are present
* ----------------------------------------------------------------------------
*/
BOOLEAN
STATIC
MemTLrdimmRankMultiplication (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *DimmID
)
{
BOOLEAN RetVal;
UINT8 *SpdBufferPtr;
UINT8 Dimm;
UINT8 NumDimmslots;
UINT8 DramCapacity;
UINT8 Ranks;
UINT8 Rows;
UINT8 RankMult;
MEM_NB_BLOCK *NBPtr;
CH_DEF_STRUCT *ChannelPtr;
ASSERT (TechPtr != NULL);
ASSERT (DimmID != NULL);
Dimm = *(UINT8*)DimmID;
ASSERT (Dimm < MAX_DIMMS_PER_CHANNEL);
NBPtr = TechPtr->NBPtr;
ChannelPtr = NBPtr->ChannelPtr;
RetVal = FALSE;
RankMult = 0;
if (!MemTGetDimmSpdBuffer3 (TechPtr, &SpdBufferPtr, Dimm)) {
ASSERT (FALSE);
}
NumDimmslots = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration,
NBPtr->MCTPtr->SocketId,
ChannelPtr->ChannelID);
if (NBPtr->MCTPtr->Status[SbLrdimms]) {
RetVal = TRUE;
//
// Determine LRDIMM Rank Multiplication
//
Ranks = ((SpdBufferPtr[SPD_RANKS] >> 3) & 0x07) + 1;
if (Ranks == 5) {
Ranks = 8;
}
DramCapacity = (SpdBufferPtr[SPD_DENSITY] & 0x0F);
Rows = 12 + ((SpdBufferPtr[SPD_ROW_SZ] >> 3) & 0x7);
if (Ranks < 4) {
RankMult = 1;
} else if (Ranks == 4) {
RankMult = (NumDimmslots < 3) ? 1 : 2;
} else if (Ranks == 8) {
RankMult = ((NumDimmslots < 3) && (DramCapacity < 4)) ? 2 : 4;
}
//
// Save Rank Information
//
ChannelPtr->LrDimmRankMult[Dimm] = RankMult;
ChannelPtr->LrDimmLogicalRanks[Dimm] = Ranks / RankMult;
NBPtr->PsPtr->LrdimmRowAddrBits[Dimm] = Rows + (RankMult >> 1);
//
// Program RankDef
//
NBPtr->SetBitField (NBPtr, BFRankDef0 + Dimm, (RankMult == 4) ? 3 : RankMult);
//
// If LrdimmRowAddressBits > 16, then we must be using some CS signals for rank
// multiplication. If this is the case, then we want to clear the CSPresent bits
// that correspond to those chipselects.
// If there are 3 DIMMs per channel, then it will always be CS67, if there are
// 2DPCH, then DIMM0 will use CS45, and DIMM1 will use CS67.
//
if ((ChannelPtr->LrDimmLogicalRanks[Dimm] < 4) && (Dimm >= NumDimmslots)) {
NBPtr->DCTPtr->Timings.CsPresent &= ~(0x3 << (Dimm << 1));
ChannelPtr->LrDimmRankMult[Dimm] = 0;
ChannelPtr->LrDimmLogicalRanks[Dimm] = 0;
NBPtr->PsPtr->LrdimmRowAddrBits[Dimm] = 0;
} else {
IDS_HDT_CONSOLE_DEBUG_CODE (
if (Dimm < NumDimmslots) {
IDS_HDT_CONSOLE (MEM_FLOW,"\tDimm %d: Log. Ranks:%d Phys. Ranks:%d RowAddrBits:%d RankMult:%d\n",
Dimm,
ChannelPtr->LrDimmLogicalRanks[Dimm],
ChannelPtr->LrdimmPhysicalRanks[Dimm],
NBPtr->PsPtr->LrdimmRowAddrBits[Dimm],
RankMult
);
}
);
}
}
return RetVal;
}
/* -----------------------------------------------------------------------------
*
* This function performs buffer to DRAM training for LRDIMMs
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in,out] OptParam - Optional parameter
*
* @return TRUE
*/
BOOLEAN
STATIC
MemTLrdimmBuf2DramTrain3 (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *OptParam
)
{
MEM_DATA_STRUCT *MemPtr;
MEM_NB_BLOCK *NBPtr;
UINT8 Dct;
UINT8 Dimm;
UINT8 ChipSel;
UINT16 DimmMask;
UINT8 i;
NBPtr = TechPtr->NBPtr;
MemPtr = NBPtr->MemPtr;
if (NBPtr->MCTPtr->Status[SbLrdimms]) {
IDS_HDT_CONSOLE (MEM_FLOW, "\nStart Buffer to DRAM training\n");
for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct);
NBPtr->SwitchDCT (NBPtr, Dct);
//
// ODM needs to be set after Dram Init
//
if (NBPtr->StartupSpeed == NBPtr->DCTPtr->Timings.Speed) {
for (ChipSel = 1; ChipSel < MAX_CS_PER_CHANNEL; ChipSel += 2) {
if ((NBPtr->DCTPtr->Timings.CsPresent & ((UINT16)1 << ChipSel)) != 0) {
if ((NBPtr->DCTPtr->Timings.DimmMirrorPresent & (1 << (ChipSel >> 1))) != 0) {
NBPtr->SetBitField (NBPtr, BFCSBaseAddr0Reg + ChipSel, ((NBPtr->GetBitField (NBPtr, BFCSBaseAddr0Reg + ChipSel)) | ((UINT32)1 << BFOnDimmMirror )));
}
}
}
}
//
// Buffer to DRAM training
//
for (Dimm = 0; Dimm < MAX_DIMMS_PER_CHANNEL; Dimm++) {
DimmMask = (UINT16)1 << Dimm;
if ((NBPtr->ChannelPtr->LrDimmPresent & DimmMask) != 0) {
IDS_HDT_CONSOLE (MEM_STATUS, "\t\nDimm %d\n", Dimm);
//
// Select the Target Chipselects
//
NBPtr->SetBitField (NBPtr, BFMrsChipSel, (Dimm << 1));
NBPtr->SetBitField (NBPtr, BFCtrlWordCS, 3 << (Dimm << 1));
NBPtr->SetBitField (NBPtr, BFLrDimmErrOutMonEn, 1);
MemTSendMBCtlWord3 (TechPtr, F2, RC3, 8);
// Send F0RC12 with data = 0010b.
MemTSendMBCtlWord3 (TechPtr, F0, RC12, 2);
//
// Wait until D18F2xA0_dct[1:0][RcvParErr]=0 or tCAL * the number of physical ranks expires.
//
IDS_HDT_CONSOLE (MEM_FLOW, "\t\tWaiting %d ms...\n", 10 * NBPtr->ChannelPtr->LrdimmPhysicalRanks[Dimm]);
for (i = 0; i < (NBPtr->ChannelPtr->LrdimmPhysicalRanks[Dimm] * 10); i++) {
MemUWait10ns (1000000, MemPtr);
//
// @todo: Provide option for polling RcvParErr to optimize DRAM bus timing.
//
}
IDS_HDT_CONSOLE (MEM_FLOW, "\n\t\tRcvParErr = %02x\n", NBPtr->GetBitField (NBPtr, BFRcvParErr));
NBPtr->SetBitField (NBPtr, BFLrDimmErrOutMonEn, 0);
MemTSendMBCtlWord3 (TechPtr, F2, RC3, 0);
// Configure for normal operation: Send F0RC12 with data = 0000b.
MemTSendMBCtlWord3 (TechPtr, F0, RC12, 0);
}
}
}
IDS_HDT_CONSOLE (MEM_FLOW, "\nEnd Buffer to DRAM training\n");
}
return TRUE;
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function copies trained delays of the first rank of a QR LRDIMM to the third rank
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in,out] OptParam - Optional parameter
*
* @return TRUE
*/
BOOLEAN
STATIC
MemTLrdimmSyncTrainedDlys (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *OptParam
)
{
UINT8 i;
UINT8 Dimm;
UINT8 Dct;
MEM_NB_BLOCK *NBPtr;
CH_DEF_STRUCT *ChannelPtr;
UINT16 WrDqsDly;
UINT16 RcvEnDly;
UINT16 RdDqsDly;
UINT16 WrDatDly;
UINT8 RdDqs2dDly;
NBPtr = TechPtr->NBPtr;
if (NBPtr->MCTPtr->Status[SbLrdimms]) {
IDS_HDT_CONSOLE (MEM_STATUS, "\tSync LRDIMM Delays to remaining ranks.\n");
for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct);
NBPtr->SwitchDCT (NBPtr, Dct);
ChannelPtr = NBPtr->ChannelPtr;
for (Dimm = 0; Dimm < 2; Dimm++) {
if (ChannelPtr->LrDimmLogicalRanks[Dimm] > 2) {
// If logical QR LRDIMM, copy trained delays from first rank to third rank
IDS_HDT_CONSOLE (MEM_FLOW, "\t\tDimm %d -> Dimm %d\n",Dimm, Dimm + 2);
for (i = 0; i < TechPtr->DlyTableWidth (); i++) {
WrDqsDly = ChannelPtr->WrDqsDlys[Dimm * TechPtr->DlyTableWidth () + i];
NBPtr->SetTrainDly (NBPtr, AccessWrDqsDly, DIMM_BYTE_ACCESS (Dimm + 2, i), WrDqsDly);
ChannelPtr->WrDqsDlys[(Dimm + 2) * TechPtr->DlyTableWidth () + i] = (UINT8)WrDqsDly;
RcvEnDly = ChannelPtr->RcvEnDlys[Dimm * TechPtr->DlyTableWidth () + i];
NBPtr->SetTrainDly (NBPtr, AccessRcvEnDly, DIMM_BYTE_ACCESS (Dimm + 2, i), RcvEnDly);
ChannelPtr->RcvEnDlys[(Dimm + 2) * TechPtr->DlyTableWidth () + i] = RcvEnDly;
RdDqsDly = ChannelPtr->RdDqsDlys[Dimm * TechPtr->DlyTableWidth () + i];
NBPtr->SetTrainDly (NBPtr, AccessRdDqsDly, DIMM_BYTE_ACCESS (Dimm + 2, i), RdDqsDly);
ChannelPtr->RdDqsDlys[(Dimm + 2) * TechPtr->DlyTableWidth () + i] = (UINT8)RdDqsDly;
WrDatDly = ChannelPtr->WrDatDlys[Dimm * TechPtr->DlyTableWidth () + i];
NBPtr->SetTrainDly (NBPtr, AccessWrDatDly, DIMM_BYTE_ACCESS (Dimm + 2, i), WrDatDly);
ChannelPtr->WrDatDlys[(Dimm + 2) * TechPtr->DlyTableWidth () + i] = (UINT8)WrDatDly;
}
if ((ChannelPtr->DimmNibbleAccess & (1 << Dimm)) != 0) {
//
// If 2D x4 (Not Currently POR for LRDIMMs)
//
for (i = 0; i < MAX_NUMBER_LANES; i++) {
if (ChannelPtr->LrDimmLogicalRanks[Dimm] > 2) {
// If logical QR LRDIMM, copy trained delays from first rank to third rank
RdDqs2dDly = ChannelPtr->RdDqs2dDlys[Dimm * MAX_NUMBER_LANES + i];
NBPtr->SetTrainDly (NBPtr, excel845 , DIMM_NBBL_ACCESS (Dimm + 2, i),
ChannelPtr->RdDqs2dDlys[Dimm * MAX_NUMBER_LANES + i]);
ChannelPtr->RdDqs2dDlys[(Dimm + 2) * MAX_NUMBER_LANES + i] = (UINT8)RdDqs2dDly;
}
}
}
}
}
}
return TRUE;
} else {
return FALSE;
}
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function performs LRDIMM specific tasks during Dimm Presence detection
*
* @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
* @param[in,out] *DimmID - Dimm ID
*
* @return TRUE
*
*/
BOOLEAN
STATIC
MemTLrdimmPresence (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN OUT VOID *DimmID
)
{
MEM_NB_BLOCK *NBPtr;
UINT32 BufferID;
UINT8 Dimm;
NBPtr = TechPtr->NBPtr;
Dimm = *(UINT8*) DimmID;
BufferID = MemTLrDimmGetBufferID (TechPtr, Dimm);
if ((BufferID == 0x0020B304) || (BufferID == 0x0020B380)) {
IDS_HDT_CONSOLE (MEM_FLOW, "\tDimm %d: Unsupported LRDIMM Buffer Revision\n", Dimm);
PutEventLog (AGESA_WARNING, MEM_WARNING_UNSUPPORTED_LRDIMM, NBPtr->Node, NBPtr->Dct, NBPtr->Channel, Dimm, &NBPtr->MemPtr->StdHeader);
NBPtr->DCTPtr->Timings.CsTestFail |= (UINT16)0x3 << (Dimm << 1);
}
return TRUE;
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function returns LRDIMM Buffer ID Info from the SPD
*
*
* @param[in,out] *TechPtr - Pointer to the Technology Block
* @param[in] Dimm - Dimm number
*
* @return Buffer ID Information
*
*/
UINT32
STATIC
MemTLrDimmGetBufferID (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN UINT8 Dimm
)
{
UINT8 *SpdBufferPtr;
UINT32 BufferID;
BufferID = 0;
MemTGetDimmSpdBuffer3 (TechPtr, &SpdBufferPtr, Dimm);
BufferID = (SpdBufferPtr[64] << 16) | (SpdBufferPtr[66] << 8) | (SpdBufferPtr[65]);
return BufferID;
}
/* -----------------------------------------------------------------------------*/
/**
*
* This function implements special case Initialization hooks for LRDIMMs
*
* @param[in] TechPtr - Tech Block Pointer
* @param[in] Entrypoint - Entrypoint to indicate when this hook is called
* @param[in] Dimm - Dimm being configured when hook is called
* @param[in] OptParam - Not Used
*/
VOID
STATIC
MemTLrdimmInitHook (
IN OUT MEM_TECH_BLOCK *TechPtr,
IN LRDIMM_HOOK_ENTRYPOINT Entrypoint,
IN UINT8 Dimm,
IN OUT VOID *OptParam
)
{
MEM_NB_BLOCK *NBPtr;
UINT8 i;
CONST UINT16 AfterTstabRcwTable[] = {
0x0270, 0x0000,
0x0122, 0x0074,
0x0124, 0x009B,
0x0126, 0x00C2,
0x0128, 0x00E8,
0x01D2, 0x5942,
0x01D4, 0x836D,
0x01CE, 0x5942,
0x01D0, 0x836D,
0x01D6, 0x017F,
0x01D8, 0x0000,
0x01F0, 0x008E,
0x01F2, 0x00BA,
0x01F4, 0x00E8,
0x01F6, 0x0114,
0x0B40, 0x7054,
0x0B42, 0xA48A,
0x0B3C, 0x7054,
0x0B3E, 0xA48A,
0x0B38, 0x0100,
0x0B3A, 0x0000,
0x0274, 0x55AA,
0x3012, 0x0080,
0x3018, 0x6B80
};
if (MemTLrDimmGetBufferID (TechPtr, Dimm) != 0x0021B304) {
return;
}
NBPtr = TechPtr->NBPtr;
switch (Entrypoint) {
case AFTER_TSTAB:
MemTSendMBCtlWord3 (TechPtr, F14, RC0, 0xB);
for ( i = 0 ; i < (sizeof (AfterTstabRcwTable) / sizeof (UINT16)); i += 2 ) {
MemTSendExtMBCtlWord3 (TechPtr, AfterTstabRcwTable[i], AfterTstabRcwTable[i + 1], 2);
}
break;
default:
//
// If a hook entrypoint is called, it should have a case for it.
//
ASSERT (FALSE);
break;
}
}