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/*
* This file is part of the coreboot project.
*
* Copyright (C) 2012 Samsung Electronics
* Copyright 2013 Google Inc.
*
* This program is free software; you can redistribute it and/or modify
* it under the terms of the GNU General Public License as published by
* the Free Software Foundation; version 2 of the License.
*
* This program is distributed in the hope that it will be useful,
* but WITHOUT ANY WARRANTY; without even the implied warranty of
* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
* GNU General Public License for more details.
*
* You should have received a copy of the GNU General Public License
* along with this program; if not, write to the Free Software
* Foundation, Inc., 51 Franklin St, Fifth Floor, Boston, MA 02110-1301 USA
*/
#include <stddef.h>
#include <stdlib.h>
#include <console/console.h>
#include <soc/samsung/exynos5420/gpio.h>
#include <soc/samsung/exynos5420/dmc.h>
#include <soc/samsung/exynos5420/setup.h>
#include <soc/samsung/exynos5420/clk.h>
const struct mem_timings mem_timings = {
.mem_manuf = MEM_MANUF_SAMSUNG,
.mem_type = DDR_MODE_DDR3,
.frequency_mhz = 800,
.direct_cmd_msr = {
0x00020018, 0x00030000, 0x00010046, 0x00000d70,
0x00000c70
},
.timing_ref = 0x000000bb,
.timing_row = 0x6836650f,
.timing_data = 0x3630580b,
.timing_power = 0x41000a26,
.phy0_dqs = 0x08080808,
.phy1_dqs = 0x08080808,
.phy0_dq = 0x08080808,
.phy1_dq = 0x08080808,
.phy0_tFS = 0x8,
.phy1_tFS = 0x8,
.phy0_pulld_dqs = 0xf,
.phy1_pulld_dqs = 0xf,
.lpddr3_ctrl_phy_reset = 0x1,
.ctrl_start_point = 0x10,
.ctrl_inc = 0x10,
.ctrl_start = 0x1,
.ctrl_dll_on = 0x1,
.ctrl_ref = 0x8,
.ctrl_force = 0x1a,
.ctrl_rdlat = 0x0b,
.ctrl_bstlen = 0x08,
.fp_resync = 0x8,
.iv_size = 0x7,
.dfi_init_start = 1,
.aref_en = 1,
.rd_fetch = 0x3,
/* SLSI recommended using 30-ohm drive strength instead of
* 34-ohm suggested by the SDRAM datasheet. */
.zq_mode_dds = 0x7,
.zq_mode_term = 0x1,
.zq_mode_noterm = 1,
/*
* Dynamic Clock: Always Running
* Memory Burst length: 8
* Number of chips: 1
* Memory Bus width: 32 bit
* Memory Type: DDR3
* Additional Latancy for PLL: 0 Cycle
*/
.memcontrol = DMC_MEMCONTROL_CLK_STOP_DISABLE |
DMC_MEMCONTROL_DPWRDN_DISABLE |
DMC_MEMCONTROL_DPWRDN_ACTIVE_PRECHARGE |
DMC_MEMCONTROL_DSREF_DISABLE |
DMC_MEMCONTROL_ADD_LAT_PALL_CYCLE(0) |
DMC_MEMCONTROL_MEM_TYPE_DDR3 |
DMC_MEMCONTROL_MEM_WIDTH_32BIT |
DMC_MEMCONTROL_NUM_CHIP_1 |
DMC_MEMCONTROL_BL_8 |
DMC_MEMCONTROL_PZQ_DISABLE |
DMC_MEMCONTROL_MRR_BYTE_7_0,
/*
* For channel interleaving, the chip_base needs to be set to
* half the bus address. So for a base address of 0x2000_0000,
* the chip_base value is 0x20 without interleaving and 0x10
* with channel interleaving. See note in section 17.14.
*/
.membaseconfig0 = (0x10 << 16) | DMC_CHIP_MASK_2GB,
.memconfig = DMC_MEMCONFIG_CHIP_MAP_SPLIT |
DMC_MEMCONFIGx_CHIP_COL_10 |
DMC_MEMCONFIGx_CHIP_ROW_16 |
DMC_MEMCONFIGx_CHIP_BANK_8,
.prechconfig_tp_cnt = 0xff,
.dpwrdn_cyc = 0xff,
.dsref_cyc = 0xffff,
.concontrol = DMC_CONCONTROL_DFI_INIT_START_DISABLE |
DMC_CONCONTROL_TIMEOUT_LEVEL0 |
DMC_CONCONTROL_RD_FETCH_DISABLE |
DMC_CONCONTROL_AREF_EN_DISABLE |
DMC_CONCONTROL_IO_PD_CON_DISABLE,
.dmc_channels = 2,
.chips_per_channel = 1,
.chips_to_configure = 1,
.send_zq_init = 1,
.gate_leveling_enable = 1,
};